Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure
Abstract: AlGaN/GaN high-electron-mobility transistors (HEMTs) with nonrecess and recess gates are simulated by solving a set of drift-diffusion equations for electrostatic potential and electron-hole ...
Abstract: Indoor localization has attracted more and more attention because of its importance in many applications. One of the most popular techniques for indoor localization is the received signal ...
Companies spend billions on programs that don’t pay off. Here’s how to fix that. by Michael Beer, Magnus Finnström and Derek Schrader Corporations are victims of the great training robbery. American ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results